Device for jetting gas and solar cell manufacturing method using the same

ABSTRACT

A device for disposing a gas, the device including: a chamber; a plurality of gas jetting plates disposed in the chamber, each gas jetting plate of the plurality of gas jetting plates including a plurality of gas jetting holes disposed on a surface thereof; and a gas pipe fluidly connected to the gas jetting plate and extending outside the chamber, wherein each gas jetting plate includes a first stage, which is fluidly connected to the gas pipe, and a final stage, which includes the plurality of gas jetting holes.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.13/117,431, filed May 27, 2011 which claims the benefit of and priorityto Korean Patent Application No. 10-2010-0101849, filed in the KoreanIntellectual Property Office on Oct. 19, 2010, and all the benefitsaccruing therefrom under 35 U.S.C. §119, the content of which in itsentirety is herein incorporated by reference.

BACKGROUND OF THE INVENTION

(a) Field of the Invention

The present invention relates to a device for jetting gas and a solarcell manufacturing method using the same.

(b) Description of the Related Art

Solar cells convert sunlight into electrical energy and are an importantclean energy or next-generation source of electrical energy. Solar cellsmay reduce use of fossil fuels, which cause a greenhouse effect due todischarge of CO₂, and may reduce use of nuclear energy, whichcontaminates the environment because it creates radioactive waste.

The solar cells have an upper electrode and a lower electrode formed ona substrate and generate electricity using two kinds of semiconductors,such as a P-type semiconductor and an N-type semiconductor, which aredisposed between the upper electrode and the lower electrode. Solarcells may be classified depending on a material of the light absorbinglayer.

A compound solar cell, which includes a Cu, In, Ga, Se (“CIGS”) compoundlayer, has high efficiency for conversion sunlight into electricitywithout using silicon, and thus is unlike known silicon based solarcells. A compound solar cell may be provided by depositing copper (Cu),indium (In), gallium (Ga), and selenium (Se) compounds on an electrodewhich is disposed on a flexible substrate, such as a stainless steel,aluminum, or a glass substrate.

A CIGS compound layer may be formed by injecting or jetting hydrogenselenide (H₂Se) on a mixed layer which includes copper (Cu), indium(In), and gallium (Ga), after the mixed layer is formed.

When the hydrogen selenide is jetted onto the substrate, as the area ofthe solar cell is increased, and the copper, gallium, indium, andhydrogen selenide are not uniformly reacted. Accordingly, there remainsa need for an improved method of jetting hydrogen selenide.

BRIEF SUMMARY OF THE INVENTION

Disclosed is a device which provides a uniform composition of a CIGScompound layer in a solar cell manufacturing process.

An embodiment provides a device for jetting gas including: a chamber; aplurality of gas jetting plates disposed in the chamber, each gasjetting plate of the plurality of gas jetting plates including aplurality of gas jetting holes disposed on a surface thereof; and a gaspipe fluidly connected to the gas jetting plate and extending outsidethe chamber, wherein each gas jetting plate includes a first stage,which is fluidly connected to the gas pipe, and a final stage, whichincludes the plurality of gas jetting holes.

One or more stages may be further disposed between the first stage andthe final stage.

The first stage, and each stage between the first stage and the finalstage, may include a gas moving hole.

A number of the gas moving holes of the first stage, and a number of gasmoving holes of each stage between the first stage and the final stage,may increases from the first stage to the final stage.

The number of the gas jetting holes may be more than the number of thegas moving holes on a stage adjacent to the final stage.

A target substrate may be disposed opposite the plurality of the gasjetting holes of a first gas jetting plate of the plurality of gasjetting plates, and the target substrate may be disposed on a second gasjetting plate of the plurality of gas jetting plates.

Another embodiment provides a device for jetting a gas including: abody, which supplies a gas; and a gas jetting unit disposed on the body,which jets the gas supplied from the body, wherein the gas jetting unitis disposed in a vertical direction with respect to a surface of thebody.

The gas jetting unit may include a plurality of gas jetting pipes, whichjet the gas supplied from the body, and the gas jetting pipes may bedisposed in a matrix.

Each gas jetting pipe of the plurality of gas jetting pipes may includea plurality of gas jetting holes on a surface thereof.

A diameter of a gas jetting hole proximal to the body is less than adiameter of a gas jetting hole distal to the body in a verticaldirection.

A target substrate may be disposed opposite the plurality of gas jettingholes of a first gas jetting pipe of the plurality of gas jetting pipes,the target substrate may be disposed in a vertical direction withrespect to a surface of the body, and the target substrate may bedisposed on a second gas jetting pipe of the plurality of gas jettingpipes.

The gas jetting unit may include a plurality of gas jetting plates,which jet the gas supplied from the body, and each gas jetting plate mayinclude a first stage, which receives the gas supplied from the body,and a final stage, which includes a plurality of gas jetting holes,which jet the gas.

A target substrate may be disposed opposite the plurality of gas jettingholes of a first gas jetting plate of the plurality of gas jettingplates, the target substrate may be disposed in a vertical directionwith respect to a surface of the body, and the target substrate may bedisposed on a second gas jetting plate of the plurality of gas jettingplates.

The device further may comprise a cover disposed on the body and whichcovers the getting unit.

Another embodiment provides a method for manufacturing a solar cell, themethod including: forming a first electrode on a substrate; forming afirst metal layer including copper and gallium on the first electrode;forming a second metal layer including indium on the first metal layer;disposing the substrate including the first electrode, the first metallayer, and the second metal layer in a gas jetting device; forming a Player by jetting and heat treating hydrogen selenide onto the secondmetal layer; forming an N layer on the P layer; and forming a secondelectrode on the N layer to manufacture the solar cell, wherein thesubstrate is supported by the gas jetting device, the gas jetting deviceincludes a first stage, which receives the hydrogen selenide fromoutside of the gas jetting device, and a gas jetting plate of the gasjetting device includes a gas jetting hole, which jets the hydrogenselenide onto the substrate.

The gas jetting device may include a body including the gas jettingplate, a cover disposed on the body, which covers the gas jetting plate,and the gas jetting plate may be disposed in a vertical direction withrespect to a surface of the body.

The heat treatment may be performed at about 500 to about 600° C.

The first electrode may include a reflective conductive metal.

The second electrode may include a transparent conductive metal.

Another embodiment provides a method for manufacturing a solar cell, themethod including: forming a first electrode on a substrate; forming afirst metal layer including copper and gallium on the first electrode;forming a second metal layer including indium on the first metal layer;disposing the substrate including the first electrode, the first metallayer, and the second metal layer in a gas jetting device; forming a Player by jetting and heat treating hydrogen selenide onto the secondmetal layer; forming an N layer on the P layer; and forming a secondelectrode on the N layer to manufacture the solar cell, wherein the gasjetting device includes a body, which supplies a gas, a gas jetting unitdisposed on the body which jets the gas supplied from the body, and acover disposed on the body, which covers the gas jetting unit, whereinthe gas jetting unit is disposed in a vertical direction with respect toa surface of the body.

The gas jetting unit may include a plurality of gas jetting pipes or aplurality of gas jetting plates.

According to an embodiment, hydrogen selenide (H₂Se) may be uniformlyjetted on an entire surface of a substrate, which includes copper,gallium, and indium, to thereby uniformly form a composition of a CIGScompound layer.

The gas jetting device further may comprise a cover disposed on the bodyand which covers the gas jetting unit

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, advantages and features of this disclosurewill become more apparent by describing in further detail exemplaryembodiments thereof with reference to the accompanying drawings, inwhich:

FIG. 1 is a cross sectional view of an exemplary embodiment of a solarcell;

FIGS. 2 to 7 sequentially show an exemplary embodiment of a method ofmanufacturing the solar cell of FIG. 1; and

FIGS. 8 to 12 are diagrams showing an exemplary embodiment of a gasjetting device in which hydrogen selenide is jetted onto a targetsubstrate.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. As those skilled in the art would realize,the disclosed embodiments may be modified in various different ways, allwithout departing from the spirit or scope of the present invention.Thus these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the present invention tothose skilled in the art.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. When a layer is referred to as being “on”another layer, substrate, or other element, it can be directly onanother layer, substrate, or other element, or a third interveninglayer, substrate, or other element may be present therebetween. Incontrast, when an element is referred to as being “directly on” anotherelement, there are no intervening elements present. As used herein, theterm “and/or” includes any and all combinations of one or more of theassociated listed items. Throughout the specification, like referencenumerals refer to like elements.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or stages, these elements, components,regions, layers and/or stages should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer, or stage from another element, component, region, layer, orstage. Thus, “a first element,” “component,” “region,” “layer,” or“stage” discussed below could be termed a second element, component,region, layer, or stage without departing from the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willbe further understood that the terms “comprises” and/or “comprising,” or“includes” and/or “including” when used in this specification, specifythe presence of stated features, regions, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, regions, integers, steps,operations, elements, components, and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present claims.

FIG. 1 is a cross sectional view of a solar cell according to anexemplary embodiment.

Referring to FIG. 1, the solar cell includes a lower electrode 120disposed on a first substrate 110.

The lower electrode 120 comprises a reflective conductive metal, such asmolybdenum (Mo), aluminum (Al), or copper (Cu). A combination comprisingat least one of the foregoing can be used.

A P layer 130 and an N layer 140 are sequentially disposed on the lowerelectrode 120. The P layer 130 comprises a CIGS compound, such as aCuInGaSe₂ compound, and the N layer 140 is formed by disposing a CdSlayer or a ZnS layer. Herein, the P layer 130 is a light absorbinglayer.

An upper electrode 150 is disposed on the N layer 140. The upperelectrode 150 comprises a transparent conductive metal, such as ZnO,indium tin oxide (“ITO”), or indium zinc oxide (“IZO”). A combinationcomprising at least one of the foregoing can be used. An upper surfaceof the upper electrode 150 may be textured in order to increase aneffective quantity of light absorbed in the solar cell by reducing lightreflection on the surface of the solar cell.

A second substrate 210 is disposed on the upper electrode 150.

Hereinafter, referring to FIGS. 2 to 7, an exemplary embodiment of amethod of manufacturing the solar cell of FIG. 1 will be furtherdisclosed.

FIGS. 2 to 7 are diagrams sequentially showing the exemplary embodimentof the method of manufacturing the solar cell of FIG. 1.

First, as shown in FIG. 2, a lower electrode 120, which comprises areflective conductive metal such as molybdenum, aluminum, or copper, ora combination comprising at least one of the foregoing, is disposed on afirst substrate 110, and a first layer 131 is formed by sputtering analloy of copper (Cu) and gallium (Ga) on the lower electrode 120.

Thereafter, as shown in FIG. 3, a second layer 132 is formed bysputtering indium (In) on the first layer 131. Herein, a targetsubstrate 100 comprises the first substrate 110 on which the lowerelectrode 120, the first layer 131, and the second layer 132 aresequentially formed.

Thereafter, as shown in FIG. 4, heat treatment is performed and hydrogenselenide (H₂Se) is disposed on an entire surface of the second layer132. A temperature of the heat treatment may be in the range of about300 to about 800° C., specifically about 400 to about 700° C., morespecifically about 500 to about 600° C.

Further, the heat treatment of hydrogen selenide may be performed in achamber 500.

A plurality of gas jetting plates 300 are disposed in the chamber 500.The plurality of gas jetting plates 300 may comprise quartz or a metal.On each gas jetting plate of the plurality of gas jetting plates 300 isa target substrate 100, and each target substrate 100 is disposed on andsupported by a top surface of a respective gas jetting plate. The targetsubstrate 100 of the upper-most gas jetting plate is optional. Hydrogenselenide may be supplied to the chamber 500 from outside of the chamber500 through a gas pipe 400. The hydrogen selenide may be jetted onto atarget substrate 100 from the lower part of an opposite gas jettingplate of the plurality of gas jetting plates 300.

Referring to FIGS. 5 and 6, the plurality of gas jetting plates 300 willbe described in further detail.

As shown in FIGS. 5 and 6, the lower part of each gas jetting platecomprises a plurality of gas jetting holes 351. Hydrogen selenide isuniformly jetted onto each target substrate 100 through the plurality ofgas jetting holes 351.

Each gas jetting plate may comprise at least one of a first stage 310, asecond stage 320, a third stage 330, a fourth stage 340, and a fifthstage 350. Gas moving holes 311, 321, 331, and 341, through which a gas,e.g., hydrogen selenide, moves to a next stage, are disposed in thefirst stage 310, the second stage 320, the third stage 330, and thefourth stage 340, respectively.

In an embodiment of a gas jetting process, hydrogen selenide is suppliedthrough the gas pipe 400. The hydrogen selenide supplied through the gaspipe 400 is jetted to the second stage 320 from the first stage 310through the gas moving hole 311 of the first stage. Hydrogen selenide ofthe second stage 320 is jetted to the third stage 330 through the gasmoving hole 321 of the second stage, hydrogen selenide of the thirdstage 330 is jetted to the fourth stage 340 through the gas moving hole331 of the third stage, and hydrogen selenide of the fourth stage 340 isjetted to the fifth stage 350 through the gas moving hole 341 of thefourth stage. Each stage may independently comprise a single gas movinghole or a plurality of gas moving holes. Moreover, hydrogen selenide maybe jetted onto the target substrate 100 from the fifth stage 350 throughthe plurality of gas jetting holes 351.

The number of the gas moving holes 311, 321, 331, and 341 of the firststage to the fourth stage and the number gas jetting holes 351 may beselected such that the number of holes in any stage is equal to orgreater than, or greater than, the number of holes in a prior stage.Thus the number of gas moving holes may increase from the first stage tothe fourth stage, and the number of gas jetting holes may be equal to orgreater than, or greater than, the number of gas moving holes of thefourth stage, such that hydrogen selenide supplied to each of the stages310, 320, 330, 340 and 350. Further, the stages may be configured suchthat the hydrogen selenide has a uniform flow velocity when the hydrogenselenide is jetted to the stages 320, 330, 340, and 350, and the targetsubstrate 100. That is, hydrogen selenide supplied to the plurality ofgas jetting plates 300 is uniformly jetted onto the target substrate100.

In an embodiment, each gas jetting plates has five stages, but thenumber of stages is not limited thereto and each gas jetting plate mayindependently comprise five or more stages. Each gas jetting plates mayindependently comprise about 1 to about 20 stages, specifically about 2to about 10 stages, more specifically about 3 to about 8 stages, orabout 4 to about 6 stages.

When hydrogen selenide is jetted onto the target substrate 100 and isheat treated, as shown in FIG. 7, a P layer 130 comprising, consistingessentially of, or consisting of CIGS, e.g., CuInGaSe₂, is formed bycontacting selenium with at least one of the first layer 131 and thesecond layer 132. As such, hydrogen selenide is uniformly jetted, tothereby uniformly form a composition of the light absorbing layer ofCIGS.

Next, as shown in FIG. 1, the N layer 140 is formed by disposing (e.g.,depositing) CdS or ZnS, and an upper electrode 150 is formed on the Nlayer 140. In an embodiment, a combination comprising at least one ofthe foregoing may be used. The upper electrode 150 may comprise atransparent conductive metal, such as ZnO, ITO, or IZO. A combinationcomprising at least one of the foregoing can be used. In an embodiment,a surface of the upper electrode 150 may be textured, i.e., to form anunevenness on a surface thereof, by etching the top of the upperelectrode 150. The texturing may increase an effective quantity of lightabsorbed in the solar cell by reducing light reflection on the surfaceof the solar cell.

Hereinafter, referring to FIGS. 8 to 12, another exemplary embodiment ofthe method for manufacturing the solar cell shown in FIG. 1 will bedescribed.

The manufacturing method of this embodiment is the same as the exemplaryembodiment described above, except that the methods are different fromeach other in respect to a device for jetting hydrogen selenide.

FIGS. 8 to 12 are diagrams showing an embodiment of a device for jettinghydrogen selenide onto a target substrate.

As shown in FIGS. 8 and 9, the gas jetting device includes a body 600, agas jetting unit 800 disposed on the body 600, and a cover 700, whichcan cover the gas jetting unit 800.

The gas jetting unit 800 includes a plurality of gas jetting pipes 810and a plurality of frames 820 and 830 supporting the pipes. Theplurality of gas jetting pipes 810 are disposed in a vertical directionwith respect to a surface of the body 600 and are disposed in a matrixhaving columns and rows, wherein a space is defined between each pair ofadjacent rows of the gas jetting pipes 810. A target substrate 100 ispositioned in the space.

A surface of each gas jetting pipe of the plurality of gas jetting pipes810 may support (e.g., contact) a surface of a respective targetsubstrate 100, and another surface of each gas jetting pipe may jetshydrogen selenide onto an adjacent target substrate. A distance betweenthe gas jetting pipe and the adjacent target substrate may be in therange of about 1 to about 100 millimeters (mm), specifically about 5 toabout 30 mm, and more specifically, in the range of about 10 to about 20mm, and the foregoing may provide a desirable distribution of hydrogenselenide on each target substrate.

As shown in FIG. 10, each gas jetting pipe of the plurality of gasjetting pipes 810 includes a plurality of gas jetting holes 811.Hydrogen selenide is supplied to the gas jetting pipe from the body 600.Because the body 600 is disposed below the plurality of gas jettingpipes 810, a flow velocity of hydrogen selenide in the gas jetting holes811 disposed on a bottom portion of each gas jetting pipe, i.e., aportion of the gas jetting pipe proximal the body, is greater than thatin the gas jetting holes 811 disposed on a top portion of each gasjetting pipe i.e., a portion of the gas jetting pipe distal to the body.In an embodiment, a diameter of the gas jetting holes increasesaccording to a distance in a direction away from the body. Accordingly,because the diameters of the gas jetting holes of the plurality of gasjetting holes 811 increases in a direction towards the top of each gasjetting pipe, each of the gas jetting holes has a uniform flow velocityof the hydrogen selenide, and thus hydrogen selenide may be uniformlyjetted onto the target substrate 100.

In another embodiment, the hydrogen selenide is jetted onto the targetsubstrate 100 through a gas pipe having a plate shape.

As shown in FIGS. 11 and 12, an embodiment of a gas jetting unit 900includes a gas jetting plate 910 and a frame 920 supporting the plate.The gas jetting plate 910 is disposed in a vertical direction withrespect to a surface of the body 600, and the target substrate 100 isdisposed on a first surface of the gas jetting plate 910. A secondsurface of the gas jetting plate 910, which is opposite the firstsurface of the gas jetting plate 910, is configured to jet hydrogenselenide onto an adjacent target substrate 100.

The gas jetting plate 910 includes a first stage 940, a second stage950, a third stage 960, a fourth stage 970, and a fifth stage 980. Gasmoving holes 941, 951, 961, and 971, through which gas is jetted to anext stage, are disposed at the first stage 940, the second stage 950,the third stage 960, and the fourth stage 970, respectively.

In an embodiment of a gas jetting process, hydrogen selenide is suppliedfrom the body 600 through a gas pipe 930. Hydrogen selenide suppliedthrough the gas pipe 930 is jetted to the second stage 950 from thefirst stage 940 through the gas moving hole 941 of the first stage.Hydrogen selenide of the second stage 950 is jetted to the third stage960 through the gas moving hole 951 of the second stage, hydrogenselenide of the third stage 960 is jetted to the fourth stage 970through the gas moving hole 961 of the third stage, and hydrogenselenide of the fourth stage 970 is jetted to the fifth stage 980through the gas moving hole 971 of the fourth stage. Moreover, hydrogenselenide is jetted to the target substrate 100 from the fifth stage 980through the gas jetting hole 981.

The number of the gas moving holes 941, 951, 961, and 971 of the firststage to the fourth stage and the number of gas jetting holes 981 may beselected such that the number of holes in any stage is equal to orgreater than, or greater than, the number of holes in a prior stage.Thus the number of gas moving holes may increase from the first stage tothe fourth stage, and the number of gas jetting holes may be equal to orgreater, or greater than, the number of gas moving holes of the fourthstage, such that hydrogen selenide supplied to each of the first tofifth stages 940, 950, 960, 970 and 980. Further, the hydrogen selenidemay have a uniform flow velocity as hydrogen selenide is jetted to thesecond to fifth stages 950, 960, 970 and 980 and the target substrate100. That is, hydrogen selenide supplied to the gas jetting plate 910 isuniformly jetted onto the target substrate 100.

In an embodiment, the gas jetting plate 910 has five stages, but it isnot limited thereto and may have five or more stages. The gas jettingplate may have about 1 to about 20 stages, specifically about 2 to about10 stages, more specifically about 3 to about 8 stages, or about 4 toabout 6 stages.

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A method for manufacturing a solar cell, themethod comprising: forming a first electrode on a substrate; forming afirst metal layer comprising copper and gallium on the first electrode;forming a second metal layer comprising indium on the first metal layer;disposing the substrate comprising the first electrode, the first metallayer, and the second metal layer in a gas jetting device; forming a Player by jetting and heat treating hydrogen selenide onto the secondmetal layer; forming an N layer on the P layer; and forming a secondelectrode on the N layer to manufacture the solar cell, wherein thesubstrate is supported by the gas jetting device, the gas jetting deviceincludes a first stage, which receives the hydrogen selenide fromoutside of the gas jetting device, and a gas jetting plate of the gasjetting device comprises a gas jetting hole, which jets the hydrogenselenide onto the substrate.
 2. The method of claim 1, wherein aplurality of stages are further disposed between the first stage and afinal stage.
 3. The method of claim 2, wherein the first stage and eachstage between the first stage and the final stage comprises a gas movinghole.
 4. The method of claim 3, wherein: a number of the gas movingholes of the first stage and a number of gas moving holes of each stagebetween the first stage and the final stage increases from the firststage to the final stage.
 5. The method of claim 4, wherein the numberof the gas jetting holes is more than the number of the gas moving holeson a stage adjacent to the final stage.
 6. The method of claim 5,wherein the gas jetting device further comprises: a body comprising thegas jetting plate, a cover disposed on the body, which covers the gasjetting plate, and the gas jetting plate is disposed in a verticaldirection with respect to a surface of the body.
 7. The method of claim1, wherein the heat treatment is performed at about 500 to about 600° C.8. The method of claim 1, wherein the first electrode comprises areflective conductive metal.
 9. The method of claim 1, wherein thesecond electrode comprises a transparent conductive metal.
 10. A methodfor manufacturing a solar cell, the method comprising: forming a firstelectrode on a substrate; forming a first metal layer comprising copperand gallium on the first electrode; forming a second metal layercomprising indium on the first metal layer; disposing the substratecomprising the first electrode, the first metal layer, and the secondmetal layer in a gas jetting device; forming a P layer by jetting andheat treating hydrogen selenide onto the second metal layer; forming anN layer on the P layer; and forming a second electrode on the N layer tomanufacture the solar cell, wherein the gas jetting device includes abody, which supplies a gas, a gas jetting unit disposed on the body andwhich jets the gas supplied from the body, and wherein the gas jettingunit is disposed in a vertical direction with respect to a surface ofthe body.
 11. The method of claim 10, wherein the gas jetting unitincludes a plurality of gas jetting pipes or a plurality of gas jettingplates.
 12. The method of claim 11, wherein each of the gas jettingpipes includes a plurality of gas jetting holes on a surface thereof.13. The method of claim 12, wherein a diameter of a gas jetting holeproximal to the body is less than a diameter of a gas jetting holedistal to the body in a vertical direction.
 14. The method of claim 10,wherein the heat treatment is performed at about 500 to about 600° C.15. The method of claim 10, wherein the first electrode comprises areflective conductive metal.
 16. The method of claim 10, wherein thesecond electrode comprises a transparent conductive metal.
 17. Themethod of claim 10, wherein the gas jetting device further comprises acover disposed on the body and which covers the gas jetting unit.